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| FDS6675A February 2003 FDS6675A 30V P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V - 25V). Features * -11 A, -30 V RDS(ON) = 13 m @ VGS = -10 V RDS(ON) = 19 m @ VGS = -4.5 V * Low gate charge * Fast switching speed * High performance trench technology for extremely low RDS(ON) * High power and current handling capability Applications * Power management * Load switch * Battery protection D D D D SO-8 DD D D 5 6 7 4 3 2 1 Pin 1 SO-8 G SG S S SS S TA=25oC unless otherwise noted 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter Ratings -30 25 (Note 1a) Units V V A W -11 -50 2.5 1.2 1 -55 to +175 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range C Thermal Characteristics RJA RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1) 50 125 25 C/W C/W C/W Package Marking and Ordering Information Device Marking FDS6675A 2003 Fairchild Semiconductor Corporation Device FDS6675A Reel Size 13'' Tape width 12mm Quantity 2500 units FDS6675A Rev C (W) FDS6675A Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on) TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) Test Conditions VGS = 0 V, ID = -250 A ID = -250 A, Referenced to 25C VDS = -24 V, VGS = 0 V VGS = 25 V, VDS = 0 V VDS = VGS, ID = -250 A ID = -250 A, Referenced to 25C VGS = -10 V, ID = -11 A ID = -9 A VGS = -4.5 V, VGS= -10 V, ID = -11 A, TJ=125C VGS = -10 V, VDS = -5 V VDS = -5 V, ID = -11 A Min -30 Typ Max Units V Off Characteristics -23 -10 100 -1 -1.6 5 10 15 14 -50 34 2330 610 300 4 14 12 70 37 24 6 9 25 22 110 60 34 13 19 18 -3 mV/C A nA V mV/C m On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) ID(on) gFS Ciss Coss Crss Rg td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr A S pF pF pF m ns ns ns ns nC nC nC A V ns nC Dynamic Characteristics VDS = -15 V, f = 1.0 MHz VGS=15 mV V GS = 0 V, f= 1.0 MHz Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -15 V, VGS = -10 V, ID = -1 A, RGEN = 6 VDS = -15 V, VGS = -5 V ID = -11 A, Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.1 A Diode Reverse Recovery Time IF = -11A diF/dt = 100A/s Diode Reverse Recovery Charge (Note 2) -0.7 33 15 -2.1 -1.2 Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50C/W when mounted on a 1in2 pad of 2 oz copper b) 105C/W when mounted on a .04 in2 pad of 2 oz copper c) 125C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDS6675A Rev C (W) FDS6675A Typical Characteristics 50 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -10V -6.0V -ID, DRAIN CURRENT (A) 40 2.4 -4.5V -4.0V -3.5V 2.2 VGS = - 3.5V 2 1.8 30 -3.0V 20 -4.0V 1.6 -4.5V 1.4 1.2 1 0.8 -6.0V -10V 10 0 0 0.5 1 1.5 2 2.5 -VDS, DRAIN TO SOURCE VOLTAGE (V) 0 10 20 30 40 50 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.05 RDS(ON), ON-RESISTANCE (OHM) 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (oC) ID = -11A VGS = - 10V ID = -5.5A 0.04 0.03 TA = 125oC 0.02 TA = 25oC 0.01 0 2 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 50 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VDS = -10V -ID, DRAIN CURRENT (A) 40 -IS, REVERSE DRAIN CURRENT (A) TA = -55oC 25oC VGS = 0V 10 TA = 125oC 1 0.1 0.01 0.001 0.0001 25oC -55oC 125oC 30 20 10 0 1 1.5 2 2.5 3 3.5 4 -VGS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6675A Rev C (W) FDS6675A Typical Characteristics 5 -VGS, GATE-SOURCE VOLTAGE (V) ID = -11A 4 CAPACITANCE (pF) 3500 VDS = -10V -15V -20V 3000 f = 1 MHz VGS = 0 V Ciss 2500 2000 1500 3 2 Coss 1000 1 500 Crss 0 0 5 10 15 20 25 30 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 25 30 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 50 Figure 8. Capacitance Characteristics. RDS(ON) LIMIT 100 -ID, DRAIN CURRENT (A) 10 1ms 10ms 100ms 1s 10s DC VGS = -10V SINGLE PULSE RJA = 125oC/W TA = 25oC 0.01 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) 40 SINGLE PULSE RJA = 125C/W TA = 25C 30 1 20 0.1 10 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RJA(t) = r(t) * RJA 0.2 RJA = 125oC/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6675A Rev C (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTa CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. The Power Franchise Programmable Active Droop DISCLAIMER ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrencha MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERa OPTOLOGICa SMART START OPTOPLANAR SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogica TruTranslation UHC UltraFETa VCX FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I2 |
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